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BAQ800 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAQ800 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1997 Aug 26 3 Philips Semiconductors Product specification AM PIN diode BAQ800 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity of this product. THERMAL CHARACTERISTICS All characteristics must be tested in the dark because of the light sensitivity of this product. Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17. For more information please refer to the “General Part of Handbook SC01”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 100 mA; see Figs 4 and 5 − 0.9 1.1 V IF = 100 mA; Tj =Tj max; see Figs 4 and 5 − 0.7 0.9 V IR reverse current VR = 100 V; see Fig.14 −− 0.1 µA VR = 100 V; Tj = 125 °C; see Fig.14 −− 30 µA τ charge carrier life time when switched from IF = 10 mA to IR = 6 mA; measured at 10% of IR; see Fig.15 10 20 −µs Cd diode capacitance f = 1 MHz; see Figs 6, 7, 8 and 9 VR =0 − 10 12 pF VR =2V − 56 pF rD diode forward resistance f = 100 kHz; see Figs 10 and 16 IF =10 µA − 3100 6000 Ω IF = 100 µA − 380 800 Ω IF =1mA − 42 80 Ω IF =10mA − 510 Ω rs diode series resistance f = 100 kHz; see Figs 11, 12 and 13 VR = 0 1000 2200 − k Ω VR = 2 V 5000 11000 − k Ω f = 1 MHz; see Figs 11, 12 and 13 VR = 0 25 50 − k Ω VR = 2 V 100 220 − k Ω SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W |
Numéro de pièce similaire - BAQ800 |
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Description similaire - BAQ800 |
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