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ES1J Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No de pièce ES1J
Description  1.0 AMP. Super Fast Surface Mount Rectifiers
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

ES1J Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- 166 -
.062(1.58)
.050(1.27)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.187(4.75)
.160(4.06)
.210(5.33)
.195(4.95)
.111(2.83)
.090(2.29)
.103(2.61)
.078(1.99)
ES1A THRU ES1J
1.0 AMP. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
SMA/DO-214AC
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1H
ES
1J
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
30
A
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
0.95
1.3
1.7
V
Maximum DC Reverse Current @ TA =25
at Rated DC Blocking Voltage @ TA=100
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
35
nS
Typical Junction Capacitance ( Note 2 )
Cj
10
8
pF
Maximum Thermal Resistance (Note 3)
R
θJA
R
θJL
85
35
℃/W
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area.


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