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BAL99 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BAL99
Description  High-speed diode
Download  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAL99 Fiches technique(HTML) 2 Page - NXP Semiconductors

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1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
BAL99
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 70 V
• Repetitive peak reverse voltage:
max. 70 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAL99 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small SOT23
plastic SMD package.
PINNING
PIN
DESCRIPTION
1
not connected
2
cathode
3
anode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: JFp = made in Hong Kong; JFt = made in Malaysia.
handbook, halfpage
21
3
MAM231
1
n.c.
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
70
V
VR
continuous reverse voltage
70
V
IF
continuous forward current
see Fig.2; note 1
215
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C


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