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TPS28225DRBR Fiches technique(PDF) 8 Page - Texas Instruments

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No de pièce TPS28225DRBR
Description  High-Frequency 4-A Sink Synchronous MOSFET Driver
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS28225DRBR Fiches technique(HTML) 8 Page - Texas Instruments

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Normal switching
PWM
LGATE
UGATE
3 −State
window
90 %
10 %
tDLL
50 %
tFL
50 %
tPWM_MIN
tDTU
90 %
10 %
tRU
90 %
10 %
tDLU
tFU
tDTL
90 %
10 %
tRL
tHLD_R
90 %
10 %
90 %
90 %
tHLD_F
Enter into
3 −State
at PWM rise
Exit
3 −State
Enter into
3 −State
at PWM fall
PWM Low and High after
3 −
State to allow Bootstrap
Capacitor Restore Charge
TRUTH TABLE
TPS28225
SLUS710 – MAY 2006
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
SOIC-8
DRB-8
NAME
1
1
UGATE
O
Upper gate drive sink/source output. Connect to gate of high-side power N-Channel MOSFET.
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between
2
2
BOOT
I/O
this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper
MOSFET.
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states
3
3
PWM
I
during operation, see the 3-state PWM Input section under DETAILED DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
4
4
GND
Ground pin. All signals are referenced to this node.
Exposed
Thermal
Connect directly to the GND for better thermal performance and EMI
die pad
pad
Lower gate drive sink/source output. Connect to the gate of the low-side power N-Channel
5
5
LGATE
O
MOSFET.
6
6
VDD
I
Connect this pin to a 5-V bias supply. Place a high quality bypass capacitor from this pin to GND.
Enable/Power Good input/output pin with 1M
Ω impedance. Connect this pin to HIGH to enable
and LOW to disable the IC. When disabled, the device draws less than 350
µA bias current. If the
7
7
EN/PG
I/O
VDD is below UVLO threshold or over temperature shutdown occurs, this pin is internally pulled
low.
Connect this pin to the source of the upper MOSFET and the drain of the lower MOSFET. This pin
8
8
PHASE
I
provides a return path for the upper gate driver.
TIMING DIAGRAM
VDD FALLING > 3 V AND TJ < 150°C
VDD RISING < 3.5 V
EN/PG FALLING > 1.0 V
PIN
EN/PG RISING
OR TJ > 160°C
PWM > 1.5 V AND
PWM SIGNAL SOURCE IMPEDANCE
< 1.7 V
PWM < 1 V
TRISE/TFALL < 200 ns
>40 k
Ω FOR > 250ns (3-State)(1)
LGATE
Low
Low
High
Low
Low
UGATE
Low
Low
Low
High
Low
EN/PG
Low
(1)
To exit the 3-state condition, the PWM signal should go low. One Low PWM input signal followed by one High PWM input signal is
required before re-entering the 3-state condition.
8
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