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TC7WBD126FK Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TC7WBD126FK Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TC7WBD126FK 2001-12-04 3 Electrical Characteristics DC Characteristics (Ta ==== −−−−40~85°C) Characteristics Symbol Test Condition VCC (V) Min Typ. (Note 2) Max Unit “H” level VIH 4.5~5.5 2.0 Input voltage “L” level VIL 4.5~5.5 0.8 V High-level output voltage VOH Figure 4 Input leakage current IIN VIN = 0~5.5 V 4.5~5.5 ±1.0 µA Power off leakage current IOFF A, B, OE = 0~5.5 V 0 ±1.0 µA Off-state leakage current (switch off) ISZ A, B = 0~5.5 V, OE = GND 4.5~5.5 ±1.0 µA IIS = 30 mA 4.5 5 7 VIS = 0 V IIS = 64 mA 4.5 5 7 ON resistance (Note 3) RON VIS = 2.4 V, IIS = 15 mA 4.5 35 50 Ω Switch ON 5.5 1.5 mA ICC VIN = VCC or GND IOUT = 0 Switch OFF 5.5 10 µA Quiescent supply current ∆ICC VIN = 3.4 V (one input) (Note 4) 5.5 2.5 mA Note 2: Typical values are at VCC = 5 V and Ta = 25°C. Note 3: Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. Note 4: Quiescent supply current at VCC = 3.4 V will be sum of ICC and ∆ICC. AC Characteristics (Ta ==== −−−−40~85°C) Characteristics Symbol Test Condition VCC (V) Min Max Unit Propagation delay time (bus to bus) tpLH tpHL Figure 1, Figure 2 (Note 5) 4.5 0.25 ns Output enable time tpZL tpZH Figure 1, Figure 3 4.5 4.5 ns Output disable time tpLZ tpHZ Figure 1, Figure 3 4.5 5.5 ns Note 5: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant. Capacitive Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Control pin input capacitance CIN (Note 6) 5.0 3 pF Switch terminal capacitance CI/O OE = GND (Note 6) 5.0 10 pF Note 6: This parameter is guaranteed by design. |
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