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2SK2596BX Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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2SK2596BX Fiches technique(HTML) 3 Page - Renesas Technology Corp |
3 / 5 page 2SK2596 Rev.3.00, Feb.14.2005, page 3 of 4 24 22 20 18 16 -10 -6 -2 2 6 10 14 VDS = 0 f = 1 MHz 100 0.1 20 50 10 2 1 5 0.2 0.5 1 2 5 10 20 VGS = 0 f = 1 MHz Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Drain to Source VDS (V) Output Capacitance vs. Drain to Source Voltage Output Power, Drain Efficiency vs. Input Power Input power Pin (W) Reverse Transfer Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) 100 0.1 20 50 10 2 1 5 0.2 0.5 1 2 5 10 20 VGS = 0 f = 1 MHz 2.5 2.0 1.5 1.0 0.5 0 100 80 60 40 20 0 100 80 60 40 20 VDS = 12 V IDO = 100 mA f = 836.5 MHz Po η D 0.01 10 2 1 5 0.2 0.5 0.1 0.02 0.05 0.01 0.02 0.05 0.1 0.2 0.5 1 Tc = -25°C 25°C 75°C 1.2 1.0 0.8 0.6 0.4 0.2 -25 0 0 25 50 75 100 125 1 mA 10 mA VDS = 12 V ID = 0.1 mA Drain to Source Saturation Voltage vs. Drain Current Drain Current ID (A) Ambient Temperature Ta (°C) Gate to Source Cutoff Voltage vs. Ambient Temperature VDS = 12 V Pulse Test |
Numéro de pièce similaire - 2SK2596BX |
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Description similaire - 2SK2596BX |
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