M5M29KE131BVP datasheet(1/33 Pages) RENESAS

No de pièce	M5M29KE131BVP

Description	134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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M5M29KE131BVP

Renesas LSIs

Rev.0.2_48a_bezz

1

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)

CMOS FLASH MEMORY

Stacked-uMCP (micro Multi Chip Package)

PIN CONFIGURATION (TOP VIEW)

Outline

48P3R-C

Digital Cellar Phone, Telecommunication,

PDA, Car Navigation System, Video Game Machine

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48

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A15

A14

A13

A12

A11

A10

A9

A8

A19

A20

WE#

RP#

A21

A22#

A18

A17

A7

A6

A5

A4

A3

A16

BYTE#

GND

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

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25

A0

24

A2

A1

20.0 mm

WP#

DESCRIPTION

FEATURES

Access time

Random

70ns (Max.)

Page

25ns(Max.)

Supply voltage

VCC= 3.0 ~ 3.6V

Ambient temperature

Ta=-40 ~ 85

°C

Package

48pin TSOP(Type-I), Lead pitch 0.5mm

Outer-lead finishing : Sn-Cu

APPLICATION

VCC

: VCC

GND

: GND

A0-A22

: Address

DQ0-DQ15

: Data I/O

CE#

: Chip enable

OE#

: Output enable

WE#

: Write enable

WP#

: Write protect

RP#

: Reset power down

BYTE#

: Byte enable

CE#

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M5M29KE131BVP

The M5M29KE131BVP is a Stacked micro Multi Chip

Package that contents 2 Dies of 64M-bit Flash memory in a

48-pin TSOP(I) for lead free use.

128M-bit Flash memory is a 16,777,216 bytes / 8,388,608

words, single power supply and high performance non-

volatile memory fabricated by CMOS technology for the

peripheral circuit and DINOR IV (Divided bit-line NOR IV)

architecture for the memory cell. All memory blocks are

locked and can not be programmed or erased, when WP# is

Low. Using Software Lock Release function, program or

erase operation can be executed.

The M5M29KE131BVP is suitable for a high performance cellular

phone and a mobile PC that are required to be small mounting

area, weight and small power dissipation.

Numéro de pièce similaire - M5M29KE131BVP

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	M5M29KE131BTP	336Kb / 33P	134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY

More results

Description similaire - M5M29KE131BVP

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	M5M29KE131BTP	336Kb / 33P	134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
	M6MGD137W34DWG	124Kb / 3P	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
	M6MGD13TW34DWG	136Kb / 3P	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
	M6MGD13TW66CWG-P	125Kb / 3P	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
	M6MGB331S8AKT	127Kb / 3P	33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
	M6MGB331S8BKT	128Kb / 3P	33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Mitsubishi Electric Sem...	M6MGB160S2BVP	269Kb / 30P	16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
	M6MGB160S4BVP	268Kb / 30P	16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
	M6MGB162S4BVP	243Kb / 29P	16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
	M6MGB166S4BWG	264Kb / 30P	16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

More results

M5M29KE131BVP Fiches technique(PDF) 1 Page - Renesas Technology Corp

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