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74HC1G66GV Fiches technique(PDF) 10 Page - NXP Semiconductors |
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74HC1G66GV Fiches technique(HTML) 10 Page - NXP Semiconductors |
10 / 20 page 2002 May 15 10 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 Type 74HC1G66 and 74HCT1G66 At recommended conditions and typical values. GND = 0 V; tr =tf = 6.0 ns. Vis is the input voltage at pins Y or Z, whichever is assigned as an input; Vos is the output voltage at pins Y or Z, whichever is assigned as an output. Notes 1. Adjust input voltage Vis is 0 dBm level (0 dBM = 1 mW into 600 Ω). 2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBM = 1 mW into 50 Ω). SYMBOL PARAMETER TEST CONDITIONS Vis(p-p) (V) VCC (V) TYP. UNIT sine-wave distortion f = 1 kHz RL =10kΩ; CL = 50 pF; see Fig.12 4.0 4.5 0.04 % 8.0 9.0 0.02 % sine-wave distortion f = 10 kHz RL =10kΩ; CL = 50 pF; see Fig.12 4.0 4.5 0.12 % 8.0 9.0 0.06 % switch OFF signal feed-through RL = 600 Ω; CL = 50 pF; f = 1 MHz; see Figs 9 and 13 note 1 4.5 −50 dB 9.0 −50 dB fmax minimum frequency response ( −3 dB) RL =50 Ω;CL = 10 pF; see Figs 10 and 11 note 2 4.5 180 MHz 9.0 200 MHz CS maximum switch capacitance 8pF |
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Description similaire - 74HC1G66GV |
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