FQD16N25C datasheet(3/8 Pages) FAIRCHILD

No de pièce	FQD16N25C

Description	250V N-Channel MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FQD16N25C Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

6

8

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

※

1. 250µ s Pulse Test

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

1020304050

0.0

0.5

1.0

1.5

V

GS = 20V

V

GS = 10V

Note : T

※

J = 25℃

I

D, Drain Current [A]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

1020

3040

50

0

2

4

6

8

10

12

V

DS = 125V

V

DS = 50V

V

DS = 200V

Note : I

※

D = 15.6A

Q

G, Total Gate Charge [nC]

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