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FDD8451 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD8451 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD8451 Rev. B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 33.5 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.7 3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.7 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 9A 19 24 m Ω VGS = 4.5V, ID = 7A 23 30 VGS = 10V, ID = 9A TJ = 150°C 32 41 gFS Forward Transcondductance VDS = 5V, ID = 9A 29 S Dynamic Characteristics Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 742 990 pF Coss Output Capacitance 112 150 pF Crss Reverse Transfer Capacitance 72 110 pF Rg Gate Resistance f = 1MHz 1.1 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 20V, ID = 1A VGS = 10V, RGS = 6Ω 7 14 ns tr Rise Time 2 10 ns td(off) Turn-Off Delay Time 19 34 ns tf Fall Time 5 10 ns Qg Total Gate Charge at 10V VDS= 20V, ID = 9A VGS = 10V 14 20 nC Qg Total Gate Charge at 5V 7.7 11 nC Qgs Gate to Source Gate Charge 2.3 nC Qgd Gate to Drain “Miller”Charge 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A 0.87 1.2 V trr Reverse Recovery Time IF = 9A, di/dt = 100A/µs 25 38 ns Qrr Reverse Recovery Charge IF = 9A, di/dt = 100A/µs 19 29 nC Notes: 1: Pulse time < 300 µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.1mH, IAS = 20A ,VDD = 36V, VGS = 10V. |
Numéro de pièce similaire - FDD8451 |
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Description similaire - FDD8451 |
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