Philips Semiconductors

Product specification

74F3893

Quad Futurebus backplane transceiver

January 18, 1991

5

DC ELECTRICAL CHARACTERISTICS

(Over recommended operating free-air temperature range unless otherwise noted.)

SYMBOL

PARAMETER

TEST

LIMITS

UNIT

MIN

MAX

High–level output current

I/On

10

100

µA

High-level output voltage

Rn

2.5

V

High-level output bus voltage

I/On

2.5

V

Low-level output voltage

Rn

0.35

0.5

V

Low-level output

I/On

0.75

1.0

1.2

V

bus voltage

0.75

1.0

1.1

V

Driver output positive

I/On

I/On = 1mA

1.9

2.9

V

clamp voltage

Dn = DE = 0.8V, RE = 2.0V

I/On = 10mA

2.3

3.2

V

Input clamp voltage

–0.73

-1.2

V

Input current at maximum input voltage

100

µA

High–level input current

Dn, RE, DE

20

µA

High–level I/O bus current

(power off)

I/On

100

µA

Low–level input current

Dn, RE

–40

µA

DE

–200

µA

Low–level I/O bus current

(power on)

I/On

RE = 0V

–20

20

µA

Off–state output current,

high–level voltage applied

Rn

20

µA

Off–state output current,

low–level voltage applied

–20

µA

Rn

’F8

-60

-150

mA

55

80

mA

Notes to DC electrical characteristics

1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.

techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting

of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any