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2N4338 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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2N4338 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 6 page 2N4338/4339/4340/4341 Vishay Siliconix Document Number: 70240 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-3 SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 2N4341 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Dynamic Common-Source Forward Transconductance gfs 1.3 3 2 4 mS Common-Source Output Conductance gos VDS = 15 V, VGS = 0 V, f = 1 kHz 30 60 mS Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 1500 800 W Common-Source Input Capacitance Ciss 5 7 7 Common-Source Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 1.5 3 3 pF Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz 6 nV ⁄ √Hz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1 1 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 0.1 pA 1 pA 10 pA 100 pA 1 nA 10 nA 10 0 8 6 4 2 0 –5 –4 –3 –2 –10 18 12 624 30 5 4 1 3 2 0 Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz gfs IDSS IGSS @ 125 _C IGSS @ 25 _C TA = 125_C TA = 25_C 500 mA 500 mA ID = 100 mA ID = 100 mA |
Numéro de pièce similaire - 2N4338 |
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Description similaire - 2N4338 |
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