Specifications and information are subject to change without notice.
WJ Communications, Inc
• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
June 2003
FP1189
½-Watt HFET
Product Information
The Communications Edge
TM
Product Features
• 50 – 4000 MHz
• +27 dBm P1dB
• +40 dBm Output IP3
• High Drain Efficiency
• 20.5 dB Gain @ 900 MHz
• MTTF >100 Years
• SOT-89 SMT Package
Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless
Product Description
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a
drain bias of +8 V and 125 mA to achieve +40 dBm
output IP3 performance and an output power of +27
dBm at 1-dB compression, while providing 20.5 dB
gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP1189 has an associated MTTF
of greater than 100 years at a mounting temperature
of 85
°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high efficiency are required.
Functional Diagram
Function
Pin No.
Input / Gate
1
Output / Drain
3
Ground
2, 4
Specifications
DC Parameter
Units
Min
Typ
Max
Saturated Drain Current, Idss (1)
mA
220
290
360
Transconductance, Gm
mS
155
Pinch Off Voltage, Vp (2)
V
-2.1
Thermal Resistance
°C / W
68
Junction Temperature (3)
°C
160
RF Parameter (4)
Units
Min
Typ
Max
Frequency Range
MHz
50
900
4000
Small Signal Gain
dB
20.5
SS Gain (50
Ω, unmatched)
dB
17
21
Maximum Stable Gain
dB
24
Output P1dB
dBm
+27.4
Output IP3 (5)
dBm
+40
Noise Figure
dB
2.7
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 1.2 mA.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
4. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in
a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance
Parameter (6)
Units
Typical
Frequency
MHz
915
1960
2140
S21
dB
20.6
15.7
14.7
S11
dB
-13
-26
-24
S22
dB
-6.0
-9.6
-9.0
Output P1dB
dBm
+27.4
+27.2
+27.2
Output IP3
dBm
+39.9
+40.4
+39.7
Noise Figure
dB
2.7
3.7
4.3
Channel Power (7)
@ -45 dBc ACPR
dBm
+21
+20.8
+18.4
Drain Voltage
V
+8
Drain Current
mA
125
6. Typical parameters represent performance in an application circuit.
7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Absolute Maximum Rating
Ordering Information
Parameter
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
°C
FP1189
½ -Watt HFET
Storage Temperature
-55 to +125
°C
FP1189-PCB900S
870 – 960 MHz Application Circuit
DC Power
2.0 W
FP1189-PCB1900S
1930 – 1990 MHz Application Circuit
RF Input Power (continuous)
6 dB above Input P1dB
FP1189-PCB2140S
2110 – 2170 MHz Application Circuit
Drain to Gate Voltage, Vdg
+14 V
Junction Temperature
+220
° C
Operation of this device above any of these parameters may cause permanent damage.
RF IN
GND
RF OUT
GND
1
2
3
4
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