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PH2729-110M Datasheet(Fiches technique) 1 Page - Tyco Electronics

Numéro de pièce PH2729-110M
Description  Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
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Fabricant  MACOM [Tyco Electronics]
Site Internet  http://www.macom.com
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Radar Pulsed Power Transistor
110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
M/A-COM Products
Released, 29 Jun 07
PH2729-110M
1
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage IC = 50mA
BVCES
63
-
V
Collector-Emitter Leakage Current
VCE = 36V
ICES
-
7.5
mA
Thermal Resistance
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
RTH(JC)
-
0.3
°C/W
Output Power
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
POUT
110
-
W
Power Gain
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
GP
6.8
-
dB
Collector Efficiency
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
η
C
35
-
%
Input Return Loss
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
RL
-
-6
dB
Load Mismatch Tolerance
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
VSWR-T
-
2:1
-
Load Mismatch Stability
Vcc = 36V, Pin = 23W
F = 2.7, 2.8, 2.9 GHz
VSWR-S
-
1.5:1
-
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
63
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
8.0
A
Power Dissipation @ +25°C
PTOT
330
W
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
Outline Drawing




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