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GS8160E18BT-150 Fiches technique(PDF) 11 Page - GSI Technology |
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GS8160E18BT-150 Fiches technique(HTML) 11 Page - GSI Technology |
11 / 23 page Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to 4.6 V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 oC TBIAS Temperature Under Bias –55 to 125 oC GS8160E18/32/36BT-250/200/150 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.03 9/2005 11/23 © 2004, GSI Technology Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges Parameter Symbol Min. Typ. Max. Unit Notes 3.3 V Supply Voltage VDD3 3.0 3.3 3.6 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 3.3 V VDDQ I/O Supply Voltage VDDQ3 3.0 3.3 3.6 V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica- tions quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+1.5 V maximum, with a pulse width not to exceed 50% tKC. |
Numéro de pièce similaire - GS8160E18BT-150 |
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Description similaire - GS8160E18BT-150 |
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