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GS841E18AGT-180 Fiches technique(PDF) 9 Page - GSI Technology |
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GS841E18AGT-180 Fiches technique(HTML) 9 Page - GSI Technology |
9 / 21 page GS841E18AT/B-180/166/150/130/100 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.03 4/2005 9/21 © 2001, GSI Technology Notes: 1. X means “don’t care,” H means “logic high,” L means “logic low.” 2. Write is the logic function of GW, BWE, BW1, BW2. See Byte Write Function table for detail. 3. CE is defined as CE1=L, CE2=H and CE3=L 4. All signals are synchronous and are sampled by CLK except OE and MOE. OE and MOE are asynchronous and drive the bus immediately. ) Note: Permanent damage to the device may occur if the Absolute Maximun Ratings are exceeded. Functional operation should be restricted to the recommended operation conditions. Exposure to higher than recommended voltages, for an extended period of time, could effect the performance and reliability of this component. Truth Table For Read/Write/Compare/Fill Write Operation CE Write DE MOE OE Match DQ Read L H X X L — Q Write LLL X H — D Compare L H L L H Data Out D Fill Write L L H X X — X Match Deselect H X X L X High High Z Deselect H X X H X High Z High Z Absolute Maximum Ratings (Voltage reference to VSS = 0 V) Symbol Description Commerical Unit VDD Supply Voltage –0.5 to 4.6 V VDDQ Output Supply Voltage –0.5 to VDD V VCLK CLK Input Voltage –0.5 to 6 V Vin Input Voltage –0.5 to VDD + 0.5 ( ≤ 4.6 V max. ) V Vout Output Voltage –0.5 to VDD + 0.5 ( ≤ 4.6 V max. ) V Iout Output Current per I/O +/–20 mA PD Power Dissipation 1.5 W TOPR Operating Temperature 0 to 70 oC TSTG Storage Temperature –55 to 125 oC |
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