2N2906A datasheet(2/8 Pages) PHILIPS

No de pièce	2N2906A

Description	PNP switching transistors

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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1997 Jun 02

2

Philips Semiconductors

Product speciﬁcation

PNP switching transistors

2N2906; 2N2906A

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• High-speed switching

• Driver applications for industrial service.

DESCRIPTION

PNP switching transistor in a TO-18 metal package.

NPN complements: 2N2222 and 2N2222A.

PINNING

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1

Simplified outline (TO-18) and symbol.

handbook, halfpage

MAM263

1

3

2

3

1

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−60

V

VCEO

collector-emitter voltage

open base

2N2906

−−40

V

2N2906A

−−60

V

IC

collector current (DC)

−−600

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

400

mW

hFE

DC current gain

IC = −150 mA; VCE = −10 V

40

120

fT

transition frequency

IC = −50 mA; VCE = −20 V; f = 100 MHz

200

−

MHz

toff

turn-off time

ICon = −150 mA; IBon = −15 mA; IBoff =15mA

−

300

ns

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