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2N2906 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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2N2906 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jun 02 3 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−60 V VCEO collector-emitter voltage open base 2N2906 −−40 V 2N2906A −−60 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−600 mA ICM peak collector current −−800 mA IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C − 400 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 438 K/W Rth j-c thermal resistance from junction to case 146 K/W |
Numéro de pièce similaire - 2N2906 |
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Description similaire - 2N2906 |
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