MUN5111W datasheet(2/11 Pages) ETL

No de pièce	MUN5111W

Description	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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MUN5111dw–2/11

DEVICE MARKING AND RESISTOR VALUES

Device

Package

Marking

R 1(K)

R 2(K)

Shipping

MUN5111DW1T1

SOT–363

0A

10

3000/Tape & Reel

MUN5112DW1T1

SOT–363

0B

22

3000/Tape & Reel

MUN5113DW1T1

SOT–363

0C

47

3000/Tape & Reel

MUN5114DW1T1

SOT–363

0D

10

47

3000/Tape & Reel

MUN5115DW1T1 (Note 3.)

SOT–363

0E

10

–

3000/Tape & Reel

MUN5116DW1T1 (Note 3.)

SOT–363

0F

4.7

–

3000/Tape & Reel

MUN5130DW1T1 (Note 3.)

SOT–363

0G

1.0

3000/Tape & Reel

MUN5131DW1T1 (Note 3.)

SOT–363

0H

2.2

3000/Tape & Reel

MUN5132DW1T1 (Note 3.)

SOT–363

0J

4.7

3000/Tape & Reel

MUN5133DW1T1 (Note 3.)

SOT–363

0K

4.7

47

3000/Tape & Reel

MUN5134DW1T1 (Note 3.)

SOT–363

0L

22

47

3000/Tape & Reel

MUN5135DW1T1 (Note 3.)

SOT–363

0M

2.2

47

3000/Tape & Reel

MUN5136DW1T1 (Note 3.)

SOT–363

0N

100

3000/Tape & Reel

MUN5137DW1T1 (Note 3.)

SOT–363

0P

47

22

3000/Tape & Reel

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V CB = –50 V, I E = 0)

I CBO

–

–100

nAdc

Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)

I CEO

–

–500

nAdc

Emitter-Base Cutoff Current

MUN5111DW1T1

(V EB = –6.0 V, I C = 0)

MUN5112DW1T1

MUN5113DW1T1

MUN5114DW1T1

MUN5115DW1T1

MUN5116DW1T1

MUN5130DW1T1

MUN5131DW1T1

MUN5132DW1T1

MUN5133DW1T1

MUN5134DW1T1

MUN5135DW1T1

MUN5136DW1T1

MUN5137DW1T1

MUN5111DW1T1

Series

I EBO

–

–0.5

–0.2

–0.1

–0.2

–0.9

–1.9

–4.3

–2.3

–1.5

–0.18

–0.13

–0.2

–0.05

–0.13

mAdc

Collector-Base Breakdown Voltage (I C = –10

µA, I

E = 0)

V (BR)CBO

–50

–

Vdc

Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO

–50

–

Vdc

ON CHARACTERISTICS (Note 4.)

Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA)

V CE(sat)

–

–0.25

Vdc

(I C= –10mA, I B= –5mA)

MUN5130DW1T1/MUN5131DW1T1

(I C= –10mA, IB= –1mA)

MUN5115DW1T1/MUN5116DW1T1

MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1

3. New resistor combinations. Updated curves to follow in subsequent data sheets.

4. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

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