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AM29LV640MB100 Fiches technique(PDF) 3 Page - SPANSION

No de pièce AM29LV640MB100
Description  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit-TM 3.0 Volt-only Boot Sector Flash Memory
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This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26190
Rev: C Amendment/+3
Issue Date: February 12, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
For new designs, S29GL064M supercedes Am29LV640MT/B and is the factory-recommended migration path
for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information.
Am29LV640MT/B
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process
technology
■ SecSi
™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— One hundred twenty-seven 32 Kword/64-Kbyte
sectors
— Eight 4 Kword/8 Kbyte boot sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 48-pin TSOP
— 63-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion


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