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TPCS8303 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPCS8303
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8303 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPCS8303
2004-07-06
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
167
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
357
°C/W
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = −16 V, Tch = 25°C, L = 500μH, IAR = −5A, RG = 25 Ω
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: ○ on lower right of the marking indicates Pin 1.
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year, sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
S8303
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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