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SS24T3 Fiches technique(PDF) 2 Page - ON Semiconductor |
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SS24T3 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page SS22, SS24 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage SS22 SS24 VRRM VRWM VR 20 40 V Average Rectified Forward Current (At Rated VR, TL = 100°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) IFRM 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Storage/Operating Case Temperature Tstg, TC −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) RqJL RqJA 24 80 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (iF = 2.0 A) vF TJ = 25°C TJ = 125°C V 0.50 0.46 Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) IR TJ = 25°C TJ = 100°C mA 0.4 5.7 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. |
Numéro de pièce similaire - SS24T3 |
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Description similaire - SS24T3 |
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