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ST1413AC Fiches technique(PDF) 1 Page - Stanson Technology |
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ST1413AC Fiches technique(HTML) 1 Page - Stanson Technology |
1 / 7 page P Channel Enhancement Mode MOSFET ST1413AC -3.4A DESCRIPTION The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOD-353 (SC-70) 1.4.5.Drain 2.Gate 3.Source Page 1 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 FEATURE - 20V/-3.4A, RDS(ON) = 130m-ohm @VGS = -4.5V -20V/-2.4A, RDS(ON) = 150m-ohm @VGS = -2.5V -20V/-1.7A, RDS(ON) = 190m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-353 (SC-70) package design 1A : Part Marking Y : Year Code W : Week Code D D S D G 1AYW |
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Description similaire - ST1413AC |
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