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ST1413AC Fiches technique(PDF) 1 Page - Stanson Technology

No de pièce ST1413AC
Description  P Channel Enhancement Mode MOSFET
Download  7 Pages
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Fabricant  STANSON [Stanson Technology]
Site Internet  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST1413AC Fiches technique(HTML) 1 Page - Stanson Technology

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P Channel Enhancement Mode MOSFET
ST1413AC
-3.4A
DESCRIPTION
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOD-353 (SC-70)
1.4.5.Drain
2.Gate
3.Source
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
FEATURE
-
20V/-3.4A, RDS(ON) = 130m-ohm
@VGS = -4.5V
-20V/-2.4A, RDS(ON) = 150m-ohm
@VGS = -2.5V
-20V/-1.7A, RDS(ON) = 190m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-353 (SC-70) package design
1A :
Part Marking
Y :
Year Code
W :
Week Code
D
D
S
D
G
1AYW


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