N Channel MOSFET

M02N60B

2.0A

FEATURE

Robust High Voltage Temination.

Avalanche Energy Specified

Source-to Drain Diode Recovery Time

Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge

Circurits

Temperature

PIN CONFIGURATION

1 2 3

1.Gate 2.Drain 3.Source

ABSOLUTE MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Drain to Current - Continuous

- Pulsed

2.0

9.0

A

Gate-to-Source Voltage – Continue

- Non-repetitive

+/-20

+/-40

V

V

Total Power Dissipation

TO-251/252

TO-220

60

60

W

Operating and Storage Temperature Range

-55 to 150

℃

Single Pulse Drain-to-Source Avalanche Energy – Tj = 25℃

20

mJ

Thermal Resistance – Junction to Case

- Junction to Ambient

θ

JA

1.0

62.5

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds

260

℃

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