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TLP3230 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TLP3230 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP3230 2 2004-1-8 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF 50 mA Forward Current Derating (Ta >= 25°C) ∆IF/°C −0.5 mA/°C Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Off-State Output Terminal Voltage VOFF 20 V On-State Current ION 160 mA On-State Current Derating (Ta >= 25°C) ∆ION/°C −1.6 mA/°C Junction Temperature Tj 125 °C Storage Temperature Range Tstg −40~125 °C Operating Temperature Range Topr −20~85 °C Lead Soldering Temperature (10 s) Tsol 260 °C Isolation Voltage (AC, 1 minute, R.H. <= 60%) (NOTE1) BVS 1500 Vrms (NOTE1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. This device is applying super small package which is free for Moisture-Proof packing. However, the application of this device is premised on use under controlled environmental condition like as measuring instrument. It is necessary to take precautions of storage condition and operating environmental condition. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VDD 20 V Forward Current IF 10 30 mA On-State Current ION 160 mA Operating Temperature Topr 25 60 °C INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V 10 µA Capacitance CT V = 0, f = 1 MHz 15 pF Off-State Current IOFF VOFF = 20 V, Ta = 50°C 1000 pA Capacitance COFF V = 0, f = 100 MHz, t < 1 s 1.0 2.5 pF |
Numéro de pièce similaire - TLP3230 |
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Description similaire - TLP3230 |
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