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BC807N3 Fiches technique(PDF) 1 Page - Cystech Electonics Corp. |
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BC807N3 Fiches technique(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 1/4 BC807N3 CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor BC807N3 Description • The BC807N3 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. • Low VCE(sat) • High switching speed. • Complementary to BC817N3 Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Power Dissipation @TA=25℃ Pd 225 (Note 1) mW Thermal Resistance, Junction to Ambient RθJA 556 (Note 1) °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BC807N3 SOT-23 B:Base C:Collector E:Emitter |
Numéro de pièce similaire - BC807N3 |
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Description similaire - BC807N3 |
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