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MA2H735 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce MA2H735
Description  Schottky Barrier Diodes (SBD)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA2H735 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
For switching circuits
I Features
• Small and thin Half New Mini-power package
• Allowing to rectify under (I
F(AV) = 1 A) condition
• Low V
F (forward voltage) type: VF > 0.5 V
(at IF = 1 A)
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV)
1A
Non-repetitive peak forward
IFSM
30
A
surge current*
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40 to +125
°C
Marking Symbol: A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
1
mA
Forward voltage (DC)
VF
IF = 1 A
0.50
V
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
50
pF
Reverse recovery time*
trr
IF = IR = 100 mA
30
ns
Irr = 0.1 · IR, RL = 100
I Electrical Characteristics T
a = 25°C
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
1 : Anode
2 : Cathode
Half New Mini-Power Package
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
W.F.Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse
Output Pulse
I
rr = 0.1 · IR
t
r
t
p
t
rr
V
R
I
F
t
t
A
3.2
± 0.1
1
2
0 to 0.05
0.9
± 0.2
0.9
± 0.2
3.8
± 0.2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)


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