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LM3205 Datasheet(Fiches technique) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Numéro de pièce LM3205
Description  650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
Télécharger  18 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD,PVIN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, V
CON
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN to VDD
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec)
+260˚C
ESD Rating (Notes 4, 13)
Human Body Model:
Machine Model:
2kV
200V
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
0mA to 650mA
Junction Temperature (T
J) Range
−30˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 5)
−30˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal microSMD
100˚C/W
Resistance (
θ
JA), microSMD TLA08 Package
(Note 6)
Junction-to-Ambient Thermal LLP
55˚C/W
Resistance (
θ
JA), LLP SDA10A Package
(Note 6)
Electrical Characteristics (Notes 2, 7, 8) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−30˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, all
specifications apply to LM3205TL/LM3205SD with: PV
IN =VDD = EN = 3.6V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
FB, MIN
Feedback Voltage at
minimum setting
V
CON = 0.32V(Note 8)
0.75
0.8
0.85
V
V
FB, MAX
Feedback Voltage at
maximum setting
V
CON = 1.44V, VIN = 4.2V(Note 8)
3.537
3.6
3.683
V
I
SHDN
Shutdown supply current
EN = SW = V
CON = 0V,
(Note 9)
0.01
2
µA
I
Q
DC bias current into V
DD
V
CON = 2V, FB = 0V,
No Switching (Note 10)
1
1.4
mA
R
DSON(P) micro
SMD
Pin-pin resistance for
PFET
I
SW = 200mA
140
200
230
m
R
DSON(N) micro
SMD
Pin-pin resistance for
NFET
I
SW = -200mA
300
415
485
m
R
DSON(P)LLP
Pin-pin resistance for
PFET
I
SW = 200mA
170
230
260
m
R
DSON(N)LLP
Pin-pin resistance for
NFET
I
SW = -200mA
330
445
515
m
I
LIM,PFET
Switch peak current limit
(Note 11)
935
1100
1200
mA
F
OSC
Internal oscillator
frequency
1.7
2
2.3
MHz
V
IH,EN
Logic high input threshold
1.2
V
V
IL,EN
Logic low input threshold
0.5
V
I
PIN,EN
Pin pull down current
5
10
µA
Z
CON
V
CON input resistance
100
k
Gain
V
CON to VOUT Gain
0.32V
≤ V
CON
≤ 1.44V
2.5
V/V
www.national.com
4




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