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TA8409SG Datasheet(Fiches technique) 4 Page - Toshiba Semiconductor

Numéro de pièce TA8409SG
Description  TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic, Bridge Driver
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TA8409S/SG, F/FG
2003-08-12
4
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
25
V
Motor drive voltage
VS
25
V
Reference voltage
Vref
25
V
PEAK
IO (PEAK)
1.0
Output current
AVE.
IO (AVE.)
0.4
A
TA8409F/FG
0.735 (Note)
Power dissipation
TA8409S/SG
PD
0.95
W
Operating temperature
Topr
−30 to 75
°C
Storage temperature
Tstg
−55 to 150
°C
Note:
This rating is obtained when the device is mounted on a 50 × 50 × 1.6 mm PCB with a Cu area of 30% or
more.
Electrical Characteristics (Ta = 25°C, VCC = 12 V, VS = 18 V)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICC1
1
Output OFF, CW/CCW mode
10.0
15.0
mA
ICC2
1
Output OFF, STOP mode
0
50
µA
Supply current
ICC3
1
Output OFF, BREAK mode
6.5
10.0
mA
1 (High)
VIN 1
2
Tj = 25°C IN1, 2
3.5
5.5
Input operating
voltage
2 (Low)
VIN 2
2
Tj = 25°C IN1, 2
GND
0.8
V
Input current
IIN
2
Sink mode, VIN = 3.5 V
3
10
µA
Input hysteresis voltage
∆VT
2
0.7
V
Upper side
VSAT U−1
3
Vref = VS, VOUT−VS measure
IO = 0.2 A, CW/CCW mode
0.9
1.2
Lower side
VSAT L−1
3
Vref = VS, VOUT−GND measure
IO = 0.2 A, CW/CCW mode
0.8
1.2
Upper side
VSAT U−2
3
Vref = VS, VOUT−VS measure
IO = 0.4 A, CW/CCW mode
1.0
1.35
Saturation voltage
Lower side
VSAT L−2
3
Vref = VS, VOUT−GND
measure
IO = 0.4 A, CW/CCW mode
0.9
1.35
V
VSAT U−1’
3
Vref = 10 V, VOUT−GND
measure
IO = 0.2 A
10.4
11.2
12.2
Output voltage
VSAT U−2’
3
Vref = 10 V, VOUT−GND
measure
IO = 0.4 A
10.9
V
Upper side
ILU
4
VL = 25 V
50
Output transistor
leakage current
Lower side
ILL
4
VL = 25 V
50
µA
Upper side
VF U−1
5
IF = 0.4 A
1.5
Diode forward voltage
Lower side
VF L−1
5
IF = 0.4 A
0.9
V
Reference current
Iref
2
Vref = 10 V, source mode
20
40
µA




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