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TPCS8006 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPCS8006 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page TPCS8006 2004-07-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8006 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.6 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 250 V) • Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 1.1 Drain current Pulse (Note 1) IDP 4.4 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.5 Drain power dissipation (t = 10 s) (Note 2b) PD 0.6 W Single pulse avalanche energy(Note3) EAS 0.07 mJ Avalanche current IAR 1.1 A Repetitive avalanche energy (Note2a, Note 4) EAR 0.15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1.2.3. Gate 4 Source 5.6.7.8 Drain JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 |
Numéro de pièce similaire - TPCS8006 |
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