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TC74LVX4051FT Fiches technique(PDF) 6 Page - Toshiba Semiconductor

No de pièce TC74LVX4051FT
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Download  11 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74LVX4051FT Fiches technique(HTML) 6 Page - Toshiba Semiconductor

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TC74LVX4051,4052,4053FT
2001-11-12
6
AC Electrical Characteristics (CL
==== 50 pF, Input: tr ==== tf ==== 3 ns, GND ==== 0 V)
Ta
= 25°C
Ta
= -40~85°C
Characteristics
Symbol
Test Condition
VEE (V) VCC (V)
Min
Typ.
Max
Min
Max
Unit
GND
2.0
¾
3.2
6.0
¾
6.9
GND
3.0
¾
1.8
3.0
¾
3.5
GND
4.5
¾
1.3
1.8
¾
2.1
Phase difference between
input and output
fI/O
All types
-3.0
3.0
¾
1.1
1.3
¾
1.5
ns
GND
2.0
¾
9.0
17
¾
20
GND
3.0
¾
5.7
9.0
¾
11
GND
4.5
¾
4.5
6.0
¾
7.0
Output enable time
tpZL
tpZH
Figure 1
(Note 1)
-3.0
3.0
¾
5.8
8.0
¾
10
ns
GND
2.0
¾
13.5
21
¾
25
GND
3.0
¾
11.3
15
¾
18
GND
4.5
¾
10.3
12
¾
14
Output disable time
tpLZ
tpHZ
Figure 1
(Note 1)
-3.0
3.0
¾
10.9
13
¾
15
ns
Control input capacitance
Cin
All types
(Note 2)
¾
¾
¾
5
10
¾
10
pF
4051
11
25
25
4052
9
20
20
COMMON terminal
capacitance
CIS
4053
Figure 2
(Note 2)
-3.0
3.0
¾
7
15
¾
15
pF
4051
6
13
13
4052
6
13
13
SWITCH terminal
capacitance
COS
4053
Figure 2
(Note 2)
-3.0
3.0
¾
6
13
¾
13
pF
4051
3
6
6
4052
3
6
6
Feedthrough capacitance
CIOS
4053
Figure 2
(Note 2)
-3.0
3.0
¾
3
6
¾
6
pF
4051
14
4052
24
Power dissipation
capacitance
CPD
4053
Figure 2
(Note 3)
GND
6.0
¾
18
¾
¾
¾
pF
Note1:
RL = 1 kW
Note2:
Cin, CIS, COS and CIOS are guaranteed by the design.
Note3:
CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the
operating current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC


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