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MMG3004NT1 Fiches technique(PDF) 3 Page - Freescale Semiconductor, Inc

No de pièce MMG3004NT1
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MMG3004NT1 Fiches technique(HTML) 3 Page - Freescale Semiconductor, Inc

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MMG3004NT1
3
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Name
Pin
Number
Description
RFin
2, 3, 4
RF input for the power amplifier. This pin is DC-coupled and
requires a DC-blocking series capacitor.
RFOUT/
VCC
10, 11, 12
RF output for the power amplifier. This pin is DC-coupled
and requires a DC-blocking series capacitor.
VCC
14
Collector voltage supply.
VBA
16
Bias voltage supply.
GND
Backside
Center
Metal
The center metal base of the PQFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
1B (Minimum)
Machine Model (per EIA/JESD 22-A115)
A (Minimum)
Charge Device Model (per JESD 22-C101)
III (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Figure 1. Pin Connections
(Top View)
1
VBA
VCC
RFout
RFout
RFout
RFin
RFin
13
59
212
311
410
16
15
14
67
8
RFin


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