AN8016NSH

Voltage Regulators

17

s Application Circuit Examples

[1] Application circuit (Step-up circuit)

The figure shows a step-up circuit that converts a 3 V input to a 5 V output.

The AN8016NSH output stage has a totem pole circuit configuration, and can directly drive an n-channel

MOSFET while minimizes switching loss and increasing efficiency. In this case, replace the npn transistor with an

n-channel MOSFET in above circuit.

[2] Notes on direct n-channel MOSFET drive

1. Select an n-channel MOSFET with a low input

capacitance.

The AN8016NSH was designed to drive bipolar

transistors, and adopts a circuit structure that can pro-

vide a constant-current (50 mA maximum) output

source current. Furthermore, it has a sink current ca-

pacity of about 50 mA. This means that designs must

be concerned about increased power dissipation due

to increased rise and fall times. If problems occur, an

inverter may be inserted as shown in figure 1 to pro-

vide amplification.

2. Use an n-channel MOSFET of a low gate threshold

voltage.

Since the AN8016NSH Out pin high-level output

with an adequately low on-resistance must be used.

a transformer as shown in figure 2, and apply a volt-

AN8016NSH

2SD2408

SBD

MA2Q738 (MA738

∗)

1 k

Ω

0.1

µF

6.8 k

Ω

20 k

Ω

390

Ω

12 k

Ω

333 pF

330 pF

103 pF

1

µF

47

µH

1.5 V

10

µF

Q1

3 V

5 V

200 mA

Note)

∗: Former part number

SBD

Figure 1. Output boosting circuit

Figure 2. Gate drive voltage boosting technique

Out

6

SBD

SBD

Out

6

5