GS72108AJ-7 datasheet(3/12 Pages) ETC1

No de pièce	GS72108AJ-7

Description	256K x 8 2Mb Asynchronous SRAM

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GS72108ATP/J

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.05 10/2004

3/12

Note:

X: “H” or “L”

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Truth Table

CE

OE

WE

DQ1 to DQ8

VDD Current

H

X

Not Selected

ISB1, ISB2

L

H

Read

IDD

LX

L

Write

LH

H

High Z

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

–0.5 to +4.6

V

Input Voltage

VIN

–0.5 to VDD +0.5

(

≤ 4.6 V max.)

V

Output Voltage

VOUT

–0.5 to VDD +0.5

(

≤ 4.6 V max.)

V

Allowable power dissipation

PD

0.7

W

Storage temperature

TSTG

–55 to 150

oC

Numéro de pièce similaire - GS72108AJ-7

Fabricant	No de pièce	Fiches technique	Description
GSI Technology	GS72108J-10	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-10I	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-12	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
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	GS72108J-15	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM

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Description similaire - GS72108AJ-7

Fabricant	No de pièce	Fiches technique	Description
GSI Technology	GS72108TP-10	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
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GSI Technology	GS72116TP	271Kb / 17P	128K x 16 2Mb Asynchronous SRAM
GSI Technology	GS72116ATP	505Kb / 18P	128K x 16 2Mb Asynchronous SRAM
ON Semiconductor	N02L83W2A	174Kb / 10P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 8 bit July 2008 - Rev. 8
GSI Technology	GS74116TP	137Kb / 14P	256K x 16 4Mb Asynchronous SRAM
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	GS78132B	227Kb / 11P	256K x 32 8Mb Asynchronous SRAM
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GS72108AJ-7 Fiches technique(PDF) 3 Page - List of Unclassifed Manufacturers

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