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2N5116 Fiches technique(PDF) 1 Page - Microsemi Corporation

No de pièce 2N5116
Description  P-CHANNEL J-FET
Download  2 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5116 Fiches technique(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices
Qualified
Level
2N5114
2N5115
2N5116
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC =+25
0C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
Unit
Gate-Source Voltage
(1)
VGS
30
Vdc
Drain-Source Voltage
(1)
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate Current
IG
50
mAdc
Power Dissipation
TA = +25
0C (2)
PT
0.500
W
Storage Temperature Range
Tstg
-65 to +200
0C
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/
0C for TA > 250C.
TO-18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +25
0C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Units
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0
µAdc
V(BR)GSS
30
Vdc
Drain-Source “On” State Voltage
VGS = 0 Vdc, ID = -15 mAdc
2N5114
VGS = 0 Vdc, ID = -7.0 mAdc
2N5115
VGS = 0 Vdc, ID = -3.0 mAdc
2N5116
VDS(on)
1.3
0.8
0.6
Vdc
Gate Reverse Current
VDS = 0, VGS = 20 Vdc
IGSS
500
pAdc
Drain Current Cutoff
VGS = 12 Vdc, VDS = -15 Vdc
2N5114
VGS = 7.0 Vdc, VDS = -15 Vdc
2N5115
VGS = 5.0 Vdc, VDS = -15 Vdc
2N5116
ID(off)
-500
-500
-500
pAdc
pAdc
pAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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