BUK7511-55B datasheet(2/16 Pages) PHILIPS

No de pièce	BUK7511-55B

Description	TRENCHMOS-TM STANDARD LEVEL FET

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK75/76/7E11-55B

TrenchMOS™ standard level FET

Product data

Rev. 02 — 11 November 2003

2 of 16

9397 750 12053

3.

Ordering information

4.

Limiting values

[1]

Current is limited by power dissipation chip rating.

[2]

Continuous current is limited by package.

Table 2:

Ordering information

Type number

Package

Name

Description

Version

BUK7511-55B

TO-220AB

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB

SOT78

BUK7611-55B

D2-PAK

Plastic single-ended surface mounted package (Philips version of D2-PAK);

3 leads (one lead cropped)

SOT404

BUK7E11-55B

I2-PAK

Plastic single-ended package (Philips version of I2-PAK); low-proﬁle 3 lead

TO-220AB

SOT226

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

-

55

V

VDGR

drain-gate voltage (DC)

RGS =20kΩ

-55

V

VGS

gate-source voltage (DC)

-

±20

V

ID

drain current (DC)

Tmb =25 °C; VGS =10V;

Figure 2 and 3

[1]

-84

A

[2]

-75

A

Tmb = 100 °C; VGS =10V; Figure 2

[1]

-59

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

-

338

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

-

157

W

Tstg

storage temperature

−55

+175

°C

Tj

junction temperature

−55

+175

°C

Source-drain diode

IDR

reverse drain current (DC)

Tmb =25 °C

[1]

-84

A

[2]

-75

A

IDRM

peak reverse drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs

-

338

A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalanche

energy

unclamped inductive load; ID =75A;

VDS ≤ 55 V; VGS = 10 V; RGS =50 Ω;

starting Tmb =25 °C

-

173

mJ

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