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KM681000ELG-5L Fiches technique(PDF) 4 Page - Samsung semiconductor |
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KM681000ELG-5L Fiches technique(HTML) 4 Page - Samsung semiconductor |
4 / 10 page CMOS SRAM KM681000E Family Revision 1.01 December 1999 4 RECOMMENDED DC OPERATING CONDITIONS1) Note: 1. Commercial Product: TA=0 to 70 °C, and Industrial Product: TA=-40 to 85°C, otherwise specified 2. Overshoot : Vcc+3.0V in case of pulse width ≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns 4. Overshoot and undershoot are sampled, not 100% tested. Item Symbol Product Min Typ Max Unit Supply voltage Vcc KM681000E Family 4.5 5.0 5.5 V Ground Vss All Family 0 0 0 V Input high voltage VIH KM681000E Family 2.2 - Vcc+0.52) V Input low voltage VIL KM681000E Family -0.53) - 0.8 V CAPACITANCE1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 6 pF Input/Output capacitance CIO VIO=0V - 8 pF DC AND OPERATING CHARACTERISTICS 1. 50 µA for Low power product, in case of Low Low power products are comercial=10µA, industrial=15µA. Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read - - 10 mA Average operating current ICC1 Cycle time=1 µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V - - 7 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - - 50 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL - - 3 mA Standby Current(CMOS) ISB1 CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc - - 501) µA |
Numéro de pièce similaire - KM681000ELG-5L |
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Description similaire - KM681000ELG-5L |
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