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KM681000ELG-5L Fiches technique(PDF) 4 Page - Samsung semiconductor

No de pièce KM681000ELG-5L
Description  128Kx8 bit Low Power CMOS Static RAM
Download  10 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681000ELG-5L Fiches technique(HTML) 4 Page - Samsung semiconductor

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CMOS SRAM
KM681000E Family
Revision 1.01
December 1999
4
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. Commercial Product: TA=0 to 70
°C, and Industrial Product: TA=-40 to 85°C, otherwise specified
2. Overshoot : Vcc+3.0V in case of pulse width
≤30ns
3. Undershoot : -3.0V in case of pulse width
≤30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM681000E Family
4.5
5.0
5.5
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
VIH
KM681000E Family
2.2
-
Vcc+0.52)
V
Input low voltage
VIL
KM681000E Family
-0.53)
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
6
pF
Input/Output capacitance
CIO
VIO=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
1. 50
µA for Low power product, in case of Low Low power products are comercial=10µA, industrial=15µA.
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
-
-
10
mA
Average operating current
ICC1
Cycle time=1
µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V
-
-
7
mA
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
-
-
50
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
-
-
3
mA
Standby Current(CMOS)
ISB1
CS1
≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc
-
-
501)
µA


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