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KM681000ELG-7 Fiches technique(PDF) 6 Page - Samsung semiconductor |
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KM681000ELG-7 Fiches technique(HTML) 6 Page - Samsung semiconductor |
6 / 10 page CMOS SRAM KM681000E Family Revision 1.01 December 1999 6 Address Data Out Previous Data Valid Data Valid TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z CS1 Address OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. CS2 tOH tAA tOLZ tLZ tOHZ tHZ(1,2) tRC tCO2 tOE tCO1 |
Numéro de pièce similaire - KM681000ELG-7 |
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Description similaire - KM681000ELG-7 |
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