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TPCS8302 Fiches technique(PDF) 5 Page - Toshiba Semiconductor

No de pièce TPCS8302
Description  Lithium lon Battery Applications Notebook PC Applications Portable Machines and Tools
Download  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8302 Fiches technique(HTML) 5 Page - Toshiba Semiconductor

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TPCS8302
2002-05-07
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
Common source
Pulse test
0
10
20
30
40
50
60
70
80
−80
−40
0
40
80
120
160
VGS = −2 V
VGS = −2.5 V
VGS = −4.5 V
ID = −5 A
−2.5 A
−2 A
Common source
Ta
= 25°C
Pulse test
0
0.2
0.4
0.6
0.8
1.0
1.2
−0.1
−3
−100
−0.3
−1
−10
−30
−5 V
−3 V
−1 V
0 V
VGS = 1 V
Common source
Ta
= 25°C
VGS = 0 V
f
= 1 MHz
Ciss
Coss
Crss
100
1000
10000
10
30
300
3000
−0.1
−1
−10
−100
−0.3
−3
−30
−80
−40
0
40
80
160
120
Common source
VDS = −10 V
ID = −200 µA
Pulse test
0
−1.0
−1.2
−0.8
−0.2
−0.4
−0.6
−4 V
Common source
ID = −5 A
Ta
= 25°C, Pulse test
0
−2
−4
−6
−8
−10
VDD = −16 V
0
−4
−8
−12
−16
−20
0
10
30
35
20
VDS
−8 V
−8 V
−4 V
VDD = −16 V
VGS
(1)
(4)
(3)
(2)
0
0.25
0.5
0.75
1.0
1.25
0
40
80
160
120
200
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s


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