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TPCS8302 Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TPCS8302 Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCS8302 2002-05-07 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) Common source Ta = 25°C, Pulse test 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −2 −4 −6 −8 −10 −2.5 V −2 V −1.8 V −1.6 V VGS = −1.4 V −3 V −10 V −8 V −6 V −4 V Common source Ta = 25°C Pulse test −10 V 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −4 −8 −10 −16 −20 −8 V −6 V −4 V −3 V −2.8 V −2.6 V −2.4 V −2.2 V −2 V −1.8 V −1.6 V VGS = −1.4 V 0 −2 −4 −6 −8 −10 −12 0 −0.4 −0.8 −1.2 −1.6 −2 −2.4 Ta = −55°C 100°C 25°C Common source VDS = −10 V Pulse test 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0 −2 −4 −6 −8 −10 Common source Ta = 25°C Pulse test −2.5 A ID = −5 A −1.2 A Common source VDS = −10 V Pulse test Ta = −55°C 25°C 100°C 1 3 10 30 100 −0.1 −1 −100 −0.3 −3 −10 −30 Common source Ta = 25°C Pulse test VGS = 2 V −2.5 V 1 10 100 3 30 −4.5 V −0.1 −1 −10 −0.3 −3 |
Numéro de pièce similaire - TPCS8302 |
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Description similaire - TPCS8302 |
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