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SLD1332V Fiches technique(PDF) 1 Page - List of Unclassifed Manufacturers

No de pièce SLD1332V
Description  The Industrys Highest Power 670 nm Band Laser Diode Achieves 500 mW Optical Power Output
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Fabricant  ETC1 [List of Unclassifed Manufacturers]
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SLD1332V Fiches technique(HTML) 1 Page - List of Unclassifed Manufacturers

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background image
0
0
If [mA]
Light-current
Far field pattern
Spectrum
400
600
200
800
300
600
900
1200
Angle [deg.]
–40
–20
20
40
0
650
660
680
690
670
Wavelength [nm]
0.2
0.0
0.4
0.6
0.8
1.0
0.2
0.0
0.4
0.6
0.8
1.0
θ//
θ⊥
CW drive
Tc = 25
°C
CW drive
Tc = 25
°C
Po = 500 mW
CW drive
Tc = 25
°C
Po = 500 mW
GaAs substrate
Active layer
N-side
electrode
P-side electrode
Laser beam
emitting point
100
µm
Threshold current
Item
Operating current
Operating voltage
Oscillation wavelength
Radiation
angle
Parallel to
junction
Perpendicular
to junction
Differential efficiency
Symbol
Ith
Iop
Vop
λp
θ//
θ
ηD
Typical value
400
900
2.4
670
8
24
1.0
Unit
mA
V
nm
deg.
mW/mA
Conditions: TC = 25
°C
Po = 500 mW@CW
0123
–1
–2
–3
Unit:
µm
0
20
40
60
–20
–40
–60
80
–80
Unit:
µm
//
s Figure 1 SLD1332V Representative Characteristics
s Figure 2 SLD1332V Chip Structure
s Table 1 SLD1332V Main Characteristics
s Figure 3 SLD1332V Near-Field Pattern


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