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2SD2220 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SD2220 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification s Features q Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE q A shunt resistor is omitted from the driver q Allowing supply with the radial taping s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 100 80 5 1.5 1 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol ICBO IEBO VCBO VCEO VEBO hFE * VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCB = 10V, IE = –50mA, f = 200MHz min 100 80 5 4000 typ 150 max 100 100 20000 1.8 2.2 Unit nA nA V V V V V MHz *h FE Rank classification Rank Q R hFE 4000 to 10000 8000 to 20000 Unit: mm Internal Connection 1:Emitter 2:Collector 3:Base MT3 Type Package 7.5 ±0.2 4.5 ±0.2 90 ° 0.8C 0.8C 0.4 ±0.1 0.8C 123 0.5 ±0.1 0.7 ±0.1 1.0 ±0.1 0.85 ±0.1 0.65 ±0.1 0.7 ±0.1 2.5 ±0.2 2.5 ±0.2 2.05 ±0.2 B E C |
Numéro de pièce similaire - 2SD2220 |
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Description similaire - 2SD2220 |
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