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2SD1485 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce 2SD1485
Description  Silicon NPN triple diffusion planar type(For high power amplification)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1485 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

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2
Power Transistors
2SD1485
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3.0W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
10
8
6
4
2
T
C=25˚C
I
B=100mA
80mA
40mA
20mA
10mA
60mA
Collector to emitter voltage V
CE
(V)
02.0
1.6
0.4
1.2
0.8
0
8
6
2
5
7
4
1
3
T
C=100˚C
25˚C
–25˚C
V
CE=5V
Base to emitter voltage V
BE
(V)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=5V
f=1MHz
T
C=25˚C
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
10–3
102
10–2
1
10–1
10
103
104
10–1
1
10
102
103
(1) P
T=10V × 0.3A (3W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)


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