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2SD1149 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SD1149 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification s Features q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 100 100 15 50 20 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO VCBO VCEO VEBO hFE * VCE(sat) fT Conditions VCB = 60V, IE = 0 VCE = 60V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz min 100 100 15 400 typ 0.05 100 max 100 1 1200 0.2 Unit nA µA V V V V MHz Marking symbol : 1V *1h FE1 Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 Marking Symbol 1VR 1VS |
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Description similaire - 2SD1149 |
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