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2SC1645S Fiches technique(PDF) 1 Page - Rohm |
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2SC1645S Fiches technique(HTML) 1 Page - Rohm |
1 / 4 page 1/2 www.rohm.com ○ c 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.D High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Packaging specifications Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1383K SMT3 B W ∗ T146 3000 ∗ Denotes hFE Circuit diagram RBE 4k Ω E : Emitter B : Base C : Collector C B E Absolute maximum ratings (Ta=25 C) Parameter Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 40 32 6 0.3 0.2 150 −55 to +150 ∗1 ∗2 Unit V V V A (DC) 1.5 A (Pulse) W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 RBE=0Ω ∗2 Single pulse Pw=10ms Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions VCB =10V, IE=0A, f=1MHz fT − 250 − MHz VCE =5V, IE= −10mA, f=100MHz BVCBO 40 −− V IC =100μA BVCES 32 −− V IC = −1mA , RBE=0Ω BVEBO 6 −− V IE =100μA ICBO −− 1 μAVCB=24V IEBO −− 1 μAVEB=4.5V VCE(sat) 5000 − −− IC =200mA, IB=0.4mA hFE −− 1.5 V VCE =5V, IC=0.1A Cob − 3 − pF ∗2 ∗1 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗1 Measured using pulse current. ∗2 Transition frequency of the device. Each lead has same dimensions 2SD1383K (1)Emitter (2)Base (3)Collector |
Numéro de pièce similaire - 2SC1645S |
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Description similaire - 2SC1645S |
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