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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2N5154L Fiches technique(PDF) 1 Page - Microsemi Corporation |
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2N5154L Fiches technique(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices Qualified Level 2N5152 2N5152L 2N5154 2N5154L JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Units Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc Collector Current IC (3, 4) 2.0 Adc Total Power Dissipation @ TA = +25 0C(1) @ TC = +25 0C(2) PT 1.0 11.8 W W Operating & Storage Temperature Range Tj, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC 15 0C/W 1) Derate linearly 5.7 mW/ 0C for TA > +250C 2) Derate linearly 66.7 mW/ 0C for TC > +250C 3) Derate linearly 80 mW/ 0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% TO- 5* 2N5152L, 2N5154L 2N5152, 2N5154 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 V(BR)CEO 80 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 IEBO 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 ICES 1.0 1.0 µAdc mAdc Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0 ICEO 50 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
Numéro de pièce similaire - 2N5154L |
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Description similaire - 2N5154L |
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