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BUK218-50DC Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK218-50DC Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 9 page Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V BG Continuous supply voltage 0 50 V I L Continuous load current per channel T mb ≤ 135˚C - 8 A P D Total power dissipation T mb ≤ 25˚C - 83.3 W T stg Storage temperature -55 175 ˚C T j Continuous junction temperature 1 -40 150 ˚C Reverse battery voltages 2 V GB Continuous reverse voltage - 16 V V GB Peak reverse voltage - 32 V Application information R I, RS External resistors 3 to limit input, status currents 3.2 - k Ω Input and status currents I I Continuous input current -5 5 mA I S Continuous status current -5 5 mA I I Repetitive peak input current δ ≤ 0.1, t p = 300 µs -50 50 mA I S Repetitive peak status current δ ≤ 0.1, t p = 300 µs -50 50 mA Inductive load clamping V BG = 13 V, IL = 8 A E BL Non-repetitive clamping energy (one T j = 150˚C prior to turn-off - 150 mJ channel) ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω 1 For normal continuous operation. A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values. The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power is dissipated and the T j rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). October 2001 2 Rev 2.010 |
Numéro de pièce similaire - BUK218-50DC |
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Description similaire - BUK218-50DC |
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