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TC55W800XB8 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TC55W800XB8 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 12 page TC55W800XB7,8 2001-10-03 1/12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800XB is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5 µA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55W800XB can be used in environments exhibiting extreme temperature conditions. The TC55W800XB is available in a plastic 48-ball BGA. FEATURES • Low-power dissipation Operating: 9.9 mW/MHz (typical) • Single power supply voltage of 2.3 to 3.3 V • Power down features using CE1 and CE2 • Data retention supply voltage of 1.5 to 3.3 V • Direct TTL compatibility for all inputs and outputs • Wide operating temperature range of −40° to 85°C • Standby Current (maximum): 3.3 V 10 µA 3.0 V 5 µA PIN ASSIGNMENT (TOP VIEW) PIN NAMES 48 PIN BGA A0~A18 Address Inputs 1 CE , CE2 Chip Enable R/W Read/Write Control OE Output Enable LB , UB Data Byte Control I/O1~I/O16 Data Inputs/Outputs VDD Power GND Ground NC No Connection • Access Times (maximum at VDD = 2.7 to 3.3 V): TC55W800XB 7 8 Access Time 70 ns 85 ns 1 CE Access Time 70 ns 85 ns CE2 Access Time 70 ns 85 ns OE Access Time 35 ns 45 ns • Package: P-TFBGA48-0811-0.75AZ (Weight: 0.21 g typ) A B C D E F G H 1 OE UB I/O11 I/O12 I/O13 I/O14 NC A8 A0 A3 A5 A17 NC A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10 A2 1 CE I/O2 I/O4 I/O5 I/O6 R/W A11 CE2 I/O1 I/O3 VDD VSS I/O7 I/O8 NC LB I/O9 I/O10 VSS VDD I/O15 I/O16 A18 2 3 4 5 6 |
Numéro de pièce similaire - TC55W800XB8 |
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Description similaire - TC55W800XB8 |
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