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LM3075 Fiches technique(PDF) 4 Page - National Semiconductor (TI) |
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LM3075 Fiches technique(HTML) 4 Page - National Semiconductor (TI) |
4 / 18 page Electrical Characteristics Limits in standard type are for T J = 25˚C only, and limits in boldface type apply over the junction temperature T J range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for reference purposes only. Unless otherwise specified V IN = 12V. (Continued) Symbol Parameter Conditions Min Typ Max Unit I CBOOT C BOOT Leakage Current V CBOOT =7V 10 nA R ds_on 1 HDRV FET driver pull-up On resistance 2.9 Ω R ds_on 2 HDRV FET driver pull-down On resistance 1.7 Ω R ds_on 3 LDRV FET driver pull-up On resistance 2.4 Ω R ds_on 4 LDRV FET driver pull-down On resistance 0.8 Ω OSCILLATOR f OSC Oscillator Frequency V FS =5V 255 300 330 kHz V FS =0V 165 200 215 D MAX Maximum Dutycycle V FB =1V 95.5 98 % T ON_MIN Minimum On Time 180 260 ns ERROR AMPLIFIER I FB Feedback pin bias current V FB = 1.5V 50 nA I COMP_SRC COMP Output Source Current V FB =1V V COMP =1V 120 µA I COMP_SNK COMP Output Sink Current V FB = 1.5V V COMP = 0.5V 110 µA Gm Error Amplifier Transconductance 620 µmho A VOL Error Amplifier Voltage Gain 1250 V/V V SL Slope Compensation (referred to the internal summing node) V FS = 0V 0.051 V/µs V FS = 5V 0.076 A CS Current Sense Amplifier Gain V COMP = 1.25V 4 5 6 V/V LOGIC V IL FS, /FPWM Pin Maximum Low Level Input Level 0.8 V V IH FS, /FPWM Pin Minimum High Level Input Level 2 V THERMAL SHUTDOWN T SD Thermal Shutdown 160 ˚C T SD_HYS Thermal Shutdown Hysteresis 10 ˚C EXT R EXT EXT pin on resistance V EXT =5V I VLIN5 =50mA 4 Ω TH EXT VLIN5 to EXT Switch Over Rising Threshold 4.6 V www.national.com 4 |
Numéro de pièce similaire - LM3075 |
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Description similaire - LM3075 |
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