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IRFP260 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IRFP260
Description  Standard Power MOSFET - N-Channel Enhancement Mode
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IRFP260 Fiches technique(HTML) 2 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 28 A, pulse test
24
34
S
C
iss
3900
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
760
pF
C
rss
320
pF
t
d(on)
23
ns
t
r
V
GS
= 10 V, V
DS = 100 VDSS, ID = 46A
30
ns
t
d(off)
R
G = 4.3 Ω (External)
90
ns
t
f
28
ns
Q
g(on)
230
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 ID25
42
nC
Q
gd
110
nC
R
thJC
0.45
K/W
R
thCK
0.24
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS = 0 V
46
A
I
SM
Repetitive; pulse width limited by T
JM
180
A
V
SD
I
F = IS, VGS = 0 V,
1.8
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F = 0.5 IS, -di/dt = 100 A/µs, VR = 100 V
260
590
ns
Q
rr
2.34
7.2
uC
TO-247 AD (IXTH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IRFP 260
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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